IXZ308N120

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IXZ308N120

制造商零件编号
IXZ308N120
制造商
IXYS RF/Littelfuse
分类目录
分离式半导体产品
子类别
晶体管 - 场效应晶体管,双极性晶体管 - 射频
系列
Z-MOS™
ECAD模型
componentsearchengine
描述
RF MOSFET N-CHANNEL DE375
产品规格书
pdfIXZ308N120.pdf
数量
询价单 添加到RFQ列表
支付方式
payment
交付
Delivery
期货: 113
参考价(美元)
Qty Unit Price Ext.Price
1+$57.24980$57.25
10+$42.93735$429.37
30+$37.21237$1116.37
100+$32.91863$3291.86
500+$30.91489$15457.44
1000+$28.62490$28624.90
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iso14001
邓白氏

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产品参数

制造商IXYS RF/Littelfuse
分类目录分离式半导体产品
系列Z-MOS™
SeriesZ-MOS™
PackagingTube
Rise Time5ns
ConfigurationSINGLE
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Operating ModeENHANCEMENT MODE
Voltage - Test100V
Transistor TypeN-Channel
Factory Lead Time10 Weeks
Number of Elements1
Max Power Dissipation880W
Transistor ApplicationSWITCHING
Max Operating Temperature175°C
Reflow Temperature-Max (s)NOT SPECIFIED
Drain Current-Max (Abs) (ID)8A
Peak Reflow Temperature (Cel)NOT SPECIFIED
制造商零件编号IXZ308N120
子类别晶体管 - 场效应晶体管,双极性晶体管 - 射频
Gain23dB
Frequency65MHz
Published2004
Part StatusObsolete
Surface MountYES
Number of Pins6
Package / Case6-SMD, Flat Lead Exposed Pad
Case ConnectionISOLATED
Voltage - Rated1200V
Terminal PositionDUAL
Qualification StatusNot Qualified
Number of Terminations6
DS Breakdown Voltage-Min1200V
Drain to Source Resistance2.1Ohm
Transistor Element MaterialSILICON
Continuous Drain Current (ID)8A
Drain to Source Voltage (Vdss)1.2kV

环境和出口分类

ECCNEAR99
ECCN CodeEAR99
Pbfree Codeyes
Moisture Sensitivity Level (MSL)1 (Unlimited)
HTSUS8541.29.0095
REACH SVHCNo SVHC
RoHS StatusRoHS Compliant
 

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