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IXFE39N90

Name: IXFE39N90
Brand: IXYS
SKU: IXFE39N90
Rating: 5.0 (999 reviews)

制造商零件编号	IXFE39N90
制造商	IXYS
分类目录	分离式半导体产品
子类别	晶体管 - 场效应管，MOSFET的 - 单
系列	HiPerFET™
描述	MOSFET N-CH 900V 34A ISOPLUS227
产品规格书	IXFE39N90.pdf
数量	立即购买。 Add to Cart
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期货: 1892

Qty	Unit Price	Ext.Price
参考价(美元)
1+	$93.34980	$93.35
10+	$72.60540	$726.05
30+	$62.23320	$1867.00
100+	$57.04710	$5704.71
500+	$54.97266	$27486.33
1000+	$51.86100	$51861.00

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产品参数

制造商IXYS

分类目录分离式半导体产品

系列HiPerFET™

SeriesHiPerFET™

PackagingTube

Published2003

Vgs (Max)±20V

Part StatusObsolete

REACH StatusREACH Unaffected

Mounting TypeChassis Mount

Number of Pins4

Package / CaseSOT-227-4, miniBLOC

Fall Time (Typ)30 ns

Terminal PositionUPPER

Number of Elements1

Turn-Off Delay Time125 ns

Operating Temperature-40°C~150°C TJ

Number of Terminations4

Transistor ApplicationSWITCHING

Transistor Element MaterialSILICON

Gate to Source Voltage (Vgs)20V

Peak Reflow Temperature (Cel)NOT SPECIFIED

Drain to Source Breakdown Voltage900V

Drive Voltage (Max Rds On,Min Rds On)10V

制造商零件编号IXFE39N90

子类别晶体管 - 场效应管，MOSFET的 - 单

MountChassis Mount

FET TypeN-Channel

Pin Count4

Rise Time68ns

TechnologyMOSFET (Metal Oxide)

SubcategoryFET General Purpose Power

ConfigurationSINGLE WITH BUILT-IN DIODE

Terminal FormUNSPECIFIED

Operating ModeENHANCEMENT MODE

Case ConnectionISOLATED

Power Dissipation580W

Additional FeatureAVALANCHE RATED

Vgs(th) (Max) @ Id5V @ 8mA

Qualification StatusNot Qualified

Power Dissipation-Max580W Tc

Rds On (Max) @ Id, Vgs220m Ω @ 19.5A, 10V

Reflow Temperature-Max (s)NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs375nC @ 10V

Continuous Drain Current (ID)34A

Drain-source On Resistance-Max0.22Ohm

Input Capacitance (Ciss) (Max) @ Vds13400pF @ 25V

Current - Continuous Drain (Id) @ 25°C34A Tc

环境和出口分类

ECCNEAR99

Pbfree Codeyes

Moisture Sensitivity Level (MSL)1 (Unlimited)

HTSUS8541.29.0095

RoHS StatusRoHS Compliant

IXFE39N90

期货: 1892

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